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| Ordering number : ENN7621 EC3A02T N-Channel Silicon Junction FET EC3A02T Electret Condenser Microphone Applications Features * Package Dimensions unit : mm 2223 [EC3A02T] Bottom View 0.05 * * * * Ultrasmall (1006 size) and thin (0.35mm) leadless package. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. 1 0.25 Top View 1 0.25 0.05 0.65 1.0 0.05 Marking 2 3 0.05 0.15 0.35 0.35 3 2 0.05 0.15 1 : Gate 2 : Drain 3 : Source SANYO : ECSP1006-3(T) 0.6 Specifications Absolute Maximum Ratings at Ta=25C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings -20 10 1 100 150 --55 to +150 Unit V mA mA mW C C Electrical Characteristics at Ta=25C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Drain Current Symbol V(BR)GDO VGS(off) IDSS Conditions IG=--100A VDS=2V, ID=1A VDS=2V, VGS=0 Ratings min --20 --0.1 140* --1.0 350* typ max Unit V V A Continued on next page. *The EC3A02T is classified by IDSS as follows.(unit : A) Rank IDSS 4 140 to 240 5 210 to 350 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 33004 TS IM TA-100656 No.7621-1/4 EC3A02T Continued from preceding page. Parameter Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol yfs Ciss Crss Conditions VDS=2V, VGS=0, f=1kHz VDS=2V, VGS=0, f=1MHz VDS=2V, VGS=0, f=1MHz Ratings min 0.5 5.0 1.1 typ max Unit mS pF pF [Ta=25C, VCC=2.0V, RL=2.2k, Cin=5pF, See Specified Test Circuit] Parameter Voltage Gain Reduced Voltage Characteristic Frequency Characteristic Total Harmonic Distortion Output Noise Voltage Symbol GV GVV Gvf THD VNO Conditions f=1kHz, VIN=10mV f=1kHz, VIN=10mV, VCC=21.5V f=1kHz to 110Hz f=1kHz, VIN=30mV VIN=0, A Curve 0.7 --102 Ratings min typ --2.0 --0.6 --2.0 --1.0 max Unit dB dB dB % dB Type No. Indication (Top view) Electrical Connection (Top view) Polarity mark (On the top) KA Drain Gate Source *Electrodes : On the bottom Polarity mark Gate Drain Source Test Circuit Voltage Gain Frequency Characteristic Distortion Reduced Voltage Characteristic 5pF 2.2k VCC=2V VCC=1.5V 33F + ~ OSC VTVM V THD BA Output Impedance 400 ID -- VDS 400 ID -- VDS Drain Current, ID -- A VGS=0 Drain Current, ID -- A 300 300 VGS=0 200 200 --0.1V 100 --0.1V 100 --0.2V --0.4V 0 0 1 2 3 4 5 IT04743 --0.2V --0.4V 0 0 0.5 1.0 1.5 2.0 IT04744 --0.3V --0.3V Drain-to-Source Voltage, VDS -- V Drain-to-Source Voltage, VDS -- V No.7621-2/4 EC3A02T 500 ID -- VGS VDS=2V 500 ID -- VGS VDS=2V 400 400 Drain Current, ID -- A 300 Drain Current, ID -- A 300 S =3 50 A 25 0 A 15 0 A 200 200 100 100 0 --1.0 --0.8 --0.6 --0.4 --0.2 0 IT04745 0 --1.0 --0.8 --0.6 --0.4 --0.2 Ta =7 5C 25 C --2 5C 0 IT04746 Gate-to-Source Voltage, VGS -- V 0.7 ID S VGS(off) -- IDSS Gate-to-Source Voltage, VGS -- V 2.0 yfs -- IDSS Forward Transfer Admittance, yfs -- mS VDS=2V ID=1A Cutoff Voltage, VGS(off) -- V 0.6 1.8 VDS=2V VGS=0 f=1kHz 1.6 0.5 1.4 0.4 1.2 0.3 1.0 0.2 0.8 0.6 0.1 0 100 200 300 400 500 IT04747 0 100 200 300 400 500 IT04748 Drain Current, IDSS -- A 2 Drain Current, IDSS -- A 5 Ciss -- VDS Crss -- VDS Reverse Transfer Capacitance, Crss -- pF 2 3 5 7 2 3 5 7 Input Capacitance, Ciss -- pF 3 10 7 5 2 1.0 7 5 3 2 1.0 0.1 1.0 Drain-to-Source Voltage, VDS -- V --0.5 --1.0 10 IT04749 3 0.1 2 3 5 7 1.0 2 3 5 GV -- IDSS Drain-to-Source Voltage, VDS -- V Reduced Voltage Characteristic, GVV -- dB 0 GVV -- IDSS 7 10 IT04750 Voltage Gain, GV -- dB --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 0 GV : VCC=2V VIN=10mV f=1kHz RL=2.2k Cin=5pF IDSS : VDS=2V --0.2 GVV : VCC=2V1.5V VIN=10mV f=1kHz IDSS : VDS=2V --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 0 100 200 300 400 500 IT04752 100 200 300 400 500 IT04751 Drain Current, IDSS -- A Drain Current, IDSS -- A No.7621-3/4 EC3A02T 1.2 THD -- IDSS Allowable Power Dissipation, PD -- mW 120 PD -- Ta Total Harmonic Distortion, THD -- % 1.0 100 0.8 80 0.6 60 0.4 40 0.2 20 0 0 100 200 300 400 500 IT04753 0 0 20 40 60 80 100 120 140 160 Drain Current, IDSS -- A Ambient Temperature, Ta -- C ITR02650 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. PS No.7621-4/4 |
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